Перегляд за автором "Konakova, R.V."

Сортувати за: Порядок: Результатів:

  • A silicon carbide thermistor 
    Boltovets, N.S.; Kholevchuk, V.V.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, P.M.; Milenin, V.V.; Mitin, V.F.; Mitin, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider a silicon carbide thermistor with multilayer Au–TiBx–Ni2Si ohmic contacts intended for operation in the 77 to 450 K temperature range.
  • A universal automated complex for control and diagnostics of semiconductor devices and structures 
    Konakova, R.V.; Rengevych, O.E.; Kurakin, A.M.; Kudryk, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in ...
  • Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them 
    Boltovets, N.S.; Voitsikhovskyi, D.I.; Konakova, R.V.; Milenin, V.V.; Makara, V.A.; Rudenko, O.V.; Mel’nichenko, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n⁺-Si substrates (surface ...
  • Contacts for silicon IMPATT and pick-off diodes 
    Boltovets, N.S.; Goncharuk, N.M.; Krivutsa, V.A.; Chaika, V.E.; Konakova, R.V.; Milenin, V.V.; Soloviev, E.A.; Tagaev, M.B.; Voitsikhovskyi, D.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We studied experimentally: (i) the ways to fabricate metal-n⁺-Si ohmic contacts with Schottky barriers; (ii) how elemental, structural and phase composition of barrier layers in the contact system, as well as of the barrier ...
  • Development of high-stable contact systems to gallium nitride microwave diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Kapitanchuk, L.M.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Sheremet, V.N.; Sveshnikov, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    High-stable heat-resistant low-resistance contact systems with diffusion barriers involving quasi-amorphous TiBx layers are suggested and studied. We have performed the structural and morphological investigations along ...
  • Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate 
    Kaganovich, E.B.; Kizyak, I.M.; Kirillova, S.I.; Konakova, R.V.; Lytvyn, O.S.; Lytvyn, P.M.; Manoilov, E.G.; Primachenko, V.E.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied the effect of microwave electromagnetic radiation on silicon low-dimensional structures. The nanocrystalline silicon (nc-Si) films on p-Si substrate were formed with pulsed laser ablation. The surface morphology ...
  • Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN 
    Belyaev, A.E.; Boltovets, N.S.; Zhilyaev, Yu.V.; Zhigunov, V.S.; Konakova, R.V.; Panteleev, V.N.; Sachenko, A.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect of microwave treatment on their electrophysical properties. ...
  • Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures 
    Bacherikov, Yu.Yu.; Konakova, R.V.; Kolyadina, E.Yu.; Kocherov, A.N.; Okhrimenko, O.B.; Svetlichnyi, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We investigated the effect of microwave radiation on absorption spectra (in 400-800 nm range) and curvature radius of SiO₂/SiC structures obtained using traditional thermal oxidation in water vapor at the temperature of ...
  • Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters 
    Avdeev, S.P.; Agueev, O.A.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Milenin, V.V.; Sechenov, D.A.; Svetlichny, A.M.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We present experimental investigations of the effect of rapid thermal treatment with incoherent IR radiation, as well as electric-spark and electron-beam treatments, on the electric parameters of Ni(Ti) n-21R(6H)-SiC ...
  • Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs 
    Venger, E.F.; Beliaev, A.A.; Boltovets, N.S.; Ermolovich, I.B.; Ivanov, V.N.; Konakova, R.V.; Milenin, V.V.; Voitsikhovski, D.I.; Figielski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid ...
  • Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals 
    Konakova, R.V.; Red’ko, S.M.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The long-term transformations of photoluminescence of GaP, GaAs and InP single crystals treated with pulsed weak magnetic fields are obtained. The treatments were performed in two regimes, namely, single-pulse (τ = 30 ...
  • Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing 
    Litvinov, V.L.; Demakov, K.D.; Agueev, O.A.; Svetlichny, A.M.; Konakova, R.V.; Lytvyn, P.M.; Lytvyn, O.S.; Milenin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Using X-ray phase analysis, Auger electron spectroscopy and atomic force microscopy, we investigated structural-phase transformations in the Ni/n-21R-SiC system induced by rapid thermal annealing in a vacuum (pressure of ...
  • Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity 
    Boltovets, M.S.; Ivanov, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Shynkarenko, V.V.; Sheremet, V.M.; Sveshnikov, Yu.N.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium boride as diffusion barrier. It is shown that the optimal method of contact resistivity measurement is the transmission line method (TLM) with ...
  • Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We investigated thermal stability of Au–TiBx (ZrBx) barrier contacts, as well as ohmic contacts with a TiBx diffusion barrier to n-Si (GaAs, InP, GaP, GaN, SiC). The electrophysical measurements of Schottky barrier diodes ...
  • Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices 
    Ivanov, V.N.; Konakova, R.V.; Milenin, V.V.; Stovpovoi, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to ...
  • Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide 
    Venger, Ye.F.; Milenin, V.V.; Ermolovich, I.B.; Konakova, R.V.; Voitsikhovskiy, D.I.; Hotovy, I.; Ivanov, V. N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, ...
  • Influence of pulse magnetic fields treatment on optical properties of GaAs based films 
    Konakova, R.V.; Sosnova, M.V.; Red’ko, S.M.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Long-term transformations of the optical reflectance of GaAs epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) have been obtained. Optical measurements were performed ...
  • Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films 
    Bacherikov, Yu.Yu.; Boltovets, N.S.; Konakova, R.V.; Kolyadina, E.Yu.; Ledn’ova, T.M.; Okhrimenko, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    In this work, we studied comparative characteristics of the SiO₂/SiC heterostructures. The following two techniques were used for SiO₂ formation: thermal oxidation in water vapor (i) and oxidation in solution (ii). ...
  • Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features 
    Dmitruk, N.L.; Karimov, A.V.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Over a wide temperature range (77…400 K), we studied I-V curves of photoelectric converter (solar cell) prototypes made on the basis of p-AlxGa₁-xAs– p-GaAs–n-GaAs–n⁺-GaAs heteroepitaxial structures grown on smooth or ...
  • Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Zhilyaev, Yu.V.; Kapitanchuk, L.M.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Naumov, A.V.; Panteleev, V.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high dislocation density. BothPc(T) curves have portions of exponential ...